advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 20m surface mount package i d 32a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c maixmum thermal resistance, junction-case 4.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200810282 thermal data parameter storage temperature range total power dissipation 27.8 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.22 continuous drain current, v gs @ 10v 20 pulsed drain current 1 120 gate-source voltage 20 continuous drain current, v gs @ 10v 32 parameter rating drain-source voltage 40 1 AP9962AGH rohs-compliant product g d s g d s to-252(h) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 20 m ? ? ,
AP9962AGH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 12 16 20 24 28 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9962AGH 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =24v v ds =32v i d =20a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9962agh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only e3 5
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